یک فشرده ساز 4:2 مافوق ولتاژ پایین و توان پایین با استفاده از ترانزیستورهای FinFET

نوع مقاله: مقاله پژوهشی

نویسندگان

مربی - گروه مهندسی برق، واحد سردرود، دانشگاه آزاد اسلامی، سردرود، تبریز، ایران

چکیده

یک فشرده ساز، بلوک سازنده بسیاری از مدارات محاسباتی می‌باشد. طراحی یک فشرده ساز که مساحت کوچکتر، توان مصرفی کم و سرعت بالا دارد همواره مورد تقاضا می‌باشد. از آنجاییکه طول کانال به سمت مقیاس نانو میل می‌کند استفاده از MOSFET به عنوان افزاره پایه در فشرده‌ساز اکنون به محدودیت های عملکردی خود از قبیل اتلاف توان میانگین و سرعت نائل می‌شود. در این مقاله، یک سلول تمام جمع کننده یک بیتی با استفاده از ترانزیستور FinFET براساس مدل فرایند PTM 32nm با ولتاژ تغذیه 0.5 ولت برای کاربردهای موبایل پیشنهاد شده است.سپس، از تمام جمع کننده پیشنهادی در ساختار فشرده ساز استفاده شده و عملکرد فشرده ساز 4:2 پیشنهادی با نتایج شبیه سازی بدست آمده از نرم افزار HSPICE ارزیابی شده است. پارامترهای اصلی فشرده ساز از قبیل توان مصرفی، تاخیر، PDP‌و EDP اندازه گیری شده و عملکرد ممتاز آن با شبیه سازی های مختلف ثابت گردید. همچین، در مقایسه با فشرده ساز مبتنی بر MOSFET، تعداد ترانزیستورها به 42 عدد کاهش یافت.

کلیدواژه‌ها

موضوعات


عنوان مقاله [English]

Ultra low voltage and low power 4-2 compressor using FinFET transistors

نویسندگان [English]

  • Amir Baghi Rahin
  • Vahid Baghi Rahin
Indicator - Department of Electrical Engineering, Sardorood Branch, Islamic Azad University, Sardorood, Tabriz, Iran
چکیده [English]

A compressor is basic building blocks of many arithmetic circuits. Design of smaller area, low power consumption and high speed compressor is always in demand. As the channel length approaches nanometer scale, the use of MOSFET as the basic device in compressor now has reaching its performance limits such as average power dissipation and speed. In this paper, a 1-bit full adder cell using FinFET transistor based on PTM 32nm process model with 0.6 V supply voltage for mobile applications is proposed. Then, the proposed full adder cell is used in the structure of compressor and performance of the proposed 4: 2 compressor is evaluated with the simulation results obtained from HSPICE. The main parameters of proposed compressor such as power compression, delay, power-delay product (PDP) and energy-delay product (EDP) were measured and its superior performance has been proved by various simulations. Also, in comparison of MOSFET based compressor, the number of transistors is decreased to 42.

کلیدواژه‌ها [English]

  • 4-2 compressor
  • Full adder
  • ultra low-voltage
  • low power
  • FinFET transistor
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