نوع مقاله: مقاله پژوهشی
نویسندگان
1 کارشناس ارشد/دانشگاه آزاد اسلامی واحد نجف آباد
2 استادیار/دانشگاه شهرکرد
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to nano scale regime. The difference between SOI and Bulk MOSFETs is the presence of a transition in the output conductance frequency response due to the nonzero body resistance. Parameters affected by this transition include: 1- THD 2- IP3, two important figures of merits in the investigation of nonlinear effects in the RF circuits. In this study, a new relation is derived indicating that only by adjusting the body resistance, the transition can be minimized. Then, by the use of a device simulator, a 45 nanometer BC SOI is designed. The results of the simulation verify the derived relation. As a result, an important graph is depicted by which it is possible to select both drain voltage and body resistance in which there is no appearance of transition in the output conductance frequency response. Finally, the improvement in THD, HD3 and IP3 in a LNA by the use of 45 nanometer SOI MOSFET is presented.
کلیدواژهها [English]
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